Download e-book for kindle: Handbook of Multilevel Metallization for Integrated Circuits by Syd R. Wilson, Clarence J. Tracy, John L. Freeman Jr.
By Syd R. Wilson, Clarence J. Tracy, John L. Freeman Jr.
This ebook solutions a big desire through pulling jointly in a single quantity an intensive technical precis of every of the foremost components that make up a multilevel steel procedure. incorporated are linked layout, research, fabrics, and production subject matters. It services as a great studying software for the engineer newly assigned to paintings in metallization. It additionally serves as a reference textual content for any multilevel marketing engineer, new or skilled, who needs to refresh their reminiscence. for somebody who desires to extra specialise in one topical region, an in depth directory of references has been supplied.
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Additional resources for Handbook of Multilevel Metallization for Integrated Circuits - Materials, Technology, and Applications
8 Final Design Rules After the various processes have been optimized and the test vehicle has been exercised a sufficient number of times, it must be decided if the yield, performance and reliability of the MLM system meet the required targets for the technology. If the system meets the targets, the design rules are made final and the transfer to production can begin. If the system fails to meet the targets, the engineer must go back to the step of defining preliminary design rules. At this point it should be determined why the preliminary rules failed and see if they can be met by a change in process or materials or if the requirements are too stringent for currently available options.
This is due in part to the fact that initially in the silicide formation, the metal is the diffusing species in the CoSi, reaction (as CoSi is forming) whereas Si is the diffusing species in the TiSi2 reaction (see Chapter 2). When the metal is the diffusing species, the possibility of bridging of the salicide between the gate and source/drain region is reduced. For many bipolar and BiCMOS applications PtSi has been used as the silicide due to its ability to form both good ohmic and Schottky contacts to ntype Si depending upon the doping density of the Si.
Green, “Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications,” J. Electrochem. Soc. U,37C (1987). H. W. Piekaar, L. F. T. Kwakman, , and E. H. A. Granneman, “LPCVD of Aluminum in a Batch-Type Load-Locked Multi-Chamber Processing 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20 21. 22. INTRODUCTION 23. 24. 25. 31 System,” Proc. IEEE VLSI Multilevel Interconnection Conf. (1989) p. 122. D. Weston, S . R. Wilson and M. Kottke, ‘‘Micrcxorrosionof Al-Cu and Al-Cu-Si Alloys: Interaction of the Metallization with Subsequent Aqueous Photolithographic Processing,” J.
Handbook of Multilevel Metallization for Integrated Circuits - Materials, Technology, and Applications by Syd R. Wilson, Clarence J. Tracy, John L. Freeman Jr.